Company Profile

RedCat Devices (RCD), born as a start-up company in 2006, is a fabless semiconductor company devoted to design semiconductor memories and analog devices for aerospace and nuclear science taking the best from standard and well consolidated CMOS technologies and using Radiation Hardening By Design (RHBD) proprietary methodologies to enhance resistance both to total ionizing dose (TID) and single event effects (SEE). RedCat Devices volatile and non volatile memories are designed specifically to be used in very aggressive environmental conditions. RedCat Devices can count on seven people permanent staff team including founders and consultants. Its capability spreads from project management to physical simulation and layout design of complete silicon devices for customers who can also be helped on silicon process evaluation. Commercial Partnership

In november 2018, RedCat Devices signed an agreement for joint development and marketing of rad-hard processors for space applications with ARSULTRA (Argentina). The agreement aims to trigger common business opportunities in the space market and realize research activities for the development of new processors to be implemented firstly on ARSULTRA on-board computers.

Technological partners (Foundries)

X-FAB (Erfurt, Germany), TowerJazz (Israel), IHP (Frankfurt, Germany), LFoundry (Avezzano, Italy), TSMC (Taiwan), UMC (Taiwan).

Other partners:

University of Jyväskylä (Jyväskylä, Finland), in particular with the RADiation Effects Facility, RADEF, an ESA-supported radiation effects test site.

University of Palermo (Italy), Dept. of Engineering for testing under irradiation (Cobalt 60) and development of rad-hard test-beds

Resellers:

Tecnode Solutions Pvt. Ltd. (India).

Research and Industrial projects

Running project:

Title: MORAL - Export-free Rad-hard Microcontroller for Space Applications
Funded under the Horizon 2020 Programme - SPACE-10-TEC-2018-2020, N52 action “JTF-2018/20-11
Period: 01/01/2020 – 30/04/2023

Title: Development of rad-hard PROMs for Space Applications (RAD-PROM)
Funded under the Italian Space Agency’s Industrial
Period: 04/06/2018 - 04/06/2020

Title: Monitoraggio del Territorio e Agricoltura di precisione mediante sistemi a pilotaggio remoto (PIGNOLETTO)
Funded under Regione Lombardia (Call HUB) – POR 2014/2020 – INNOVAZIONE E COMPETITIVITA’
Period: 01/02/2020 – 01/08/2022

Title: ESA-NAVISP Anti Jammer SoC (AJS) ESA Contract EL2-004
Period: 18/09/2019 – 18/03/2022

Former projects:

Title: Radiation Hard 16Mbit MCM SRAM for Space Applications (EuroSRAM4Space)
Funded under the European Union’s Eureka Eurostars2 Programme.

Concluded
Title: Radiation Hard Resistive Random-Access Memory (R2RAM )
Funded under the European Union’s Horizon2020 Programme.

Concluded
Books

  • C. Calligaro and U. Gatti, (2018). “Rad-Hard Mixed-Signal IC Design, Theory and Implementation” in A. Baschirotto, P. Harpe, K. Makinwa, “Next-Generation ADCs, High-Performance Power Management, and Technology Considerations for Advanced Integrated Circuits”, pp. 273-297, Springer, ISBN 978-3-030-25267-0, ISBN 978-3-030-25267-0 (eBook), https://doi.org/10.1007/978-3-030-25267-0
  • Calligaro, C., and Gatti, U. (Eds.). (2019). Rad-hard semiconductor memories. River Publishers, Series in Electronic Materials and Devices. ISBN: 9788770220200.”
Location

Via Moncucco 22, 20142 Milan Milan, Italy

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Contact business

    Contact Information
    • Address

      Via Moncucco 22, 20142 Milan Milan, Italy

    • Manager

      Cristiano Calligaro - Chief Executive Officer

    • Phone number

      +393288822037

    • Email

      c.calligaro@redcatdevices.it

    • Website

      https://redcatdevices.eu/

    Application Domain
    Our Offices in Italy
    Products | Services | Applications |Technologies

    “RedCat Devices proprietary methodology for rad-hard components has been proven both for space applications (TID up to 300 krad (Si) and SEL over 80 MeV*mg/cm2 (Si)) and high energy physics experiments (TID over 25 Mrad (Si)) pushing standard Bulk CMOS to the same level of reliability of SOI/SOS and Triple Well CMOS. RedCat Devices also manages irradiation testing campaigns by using proprietary methodologies and FPGA-based custom board implementing ATEequivalent functions for in-situ (under irradiation) testing.

    Products
    RAD-HARD components:

    1. RC7C1024RHS: a 1Mbit (128Kbit x8) SRAM for standard space applications (LEO, MEO, HEO, GEO). Foundry: TowerJazz.
    2. RC7C2048RHM: a 2Mbit (256kbit x8) SRAM device for low orbit (LEO) space applications. Foundry: TowerJazz.
    3. RC7C4096MCT is a 4Mbit (128kbit x8 x4) MCM SRAM device for low orbit (LEO) space applications. Foundry: TowerJazz.
    4. RC7C4096RHM: a 4Mbit (512kbit x8) SRAM device for low orbit (LEO). space applications. Foundry: TowerJazz.
    5. RC7C512RHH: a 512Kbit (64Kbit x8) SRAM for Deep Space and High Energy Physics Experiments. Foundry: TowerJazz.
    6. RC7C512RHM: a 512Kbit (64Kbit x8) SRAM device for low orbit (LEO) space applications. Foundry: TowerJazz.
    7. RC7C512RHS: a 512Kbit (64kbit x8) SRAM device for standard space applications (LEO, MEO, HEO, GEO). Foundry: TowerJazz.
    8. RC7C81092MCX: a 8Mbit (256kbit x8 x4) MCM SRAM device for low orbit (LEO) space applications. Foundry: X-FAB.

    Rad-hard Libraries:

    RedCat Devices rad-hard libraries are designed to be used in digital ASICs for space applications. All cells can be placed by using standard tools such as Cadence or Tanner.

    Standard Cells:

    RadLib18T. Rad-hard standard cell library (1.8V) for TowerJazz ts18sl CMOS process (RadLib18T_v3).
    RadLib18XF. Rad-hard standard cell library (1.8V) for X-FAB xh018 CMOS process (RadLib18XF_v2).
    RadLib12I. Rad-hard standard cell library (1.2V) for IHP sg13s CMOS process.
    RadLib18LF. Rad-hard standard cell library (1.8V) for LFoundry lf15a CMOS process.
    RadLib18TC. Rad-hard standard cell library (1.8V) for TSMC cm018 CMOS process.
    RadLib33T. Rad-hard standard cell library (3.3V) for TowerJazz ts18sl CMOS process.
    RadLib33XF. Rad-hard standard cell library (3.3V) for X-FAB xh018 CMOS process (RadLib33XF_v1).”